- 您现在的位置：买卖IC网 > Sheet目录513 > SI7530DP-T1-GE3 (Vishay Siliconix)MOSFET N/P-CH 60V PWRPAK 8-SOIC
Si7530DP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
N-Ch
P-Ch
N-Ch
P-Ch
1
-1
3
-3
± 100
± 100
V
nA
V DS = 60 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 60 V, V GS = 0 V
V DS = 60 V, V GS = 0 V, T J = 55°C
P-Ch
N-Ch
-1
5
μA
V DS = - 60 V, V GS = 0 V, T J = 55°C
P-Ch
-5
On-State Drain Current a
I D(on)
V DS ≥ 5 V, V GS = 10 V
V DS ≤ - 5 V, V GS = - 10 V
V GS = 10 V, I D = 4.6 A
N-Ch
P-Ch
N-Ch
15
- 25
0.060
0.075
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 10 V, I D = - 5.0 A
V GS = 4.5 V, I D = 4.0 A
P-Ch
N-Ch
0.051
0.080
0.064
0.100
Ω
V GS = - 4.5 V, I D = - 4.5 A
P-Ch
0.064
0.080
Forward Transconductance a
g fs
V DS = 15 V, I D = 4.6 A
V DS = - 15 V, I D = - 5.0 A
N-Ch
P-Ch
6
16
S
Diode Forward Voltage a
V SD
I S = 2.7 A, V GS = 0 V
I S = - 2.9 A, V GS = 0 V
N-Ch
P-Ch
0.85
- 0.85
1.2
- 1.2
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
N-Channel
V DS = 30 V, V GS = 10 V, I D = 15 A
P-Channel
V DS = - 30 V, V GS = - 10 V, I D = - 5.0 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
12
26
2
4.5
3.5
7
20
40
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Reverse Recovery Energy
R g
t d(on)
t r
t d(off)
t f
t rr
Q rr
f = 1.0 MHz
N-Channel
V DD = 30 V, R L = 30 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
P-Channel
V DD = - 30 V, R L = 30 Ω
I D ? - 1 A, V GEN = - 10 V, R g = 6 Ω
I F = 2.7 A, dI/dt = 100 A/μs
I F = - 5 A, dI/dt = 100 A/μs
I F = 2.7 A, dI/dt = 100 A/μs
I F = - 5 A, dI/dt = 100 A/μs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
3.5
1.5
7
7
8
8
9
15
65
7
30
30
40
33
57
2.5
11
15
15
15
15
25
100
20
45
60
80
66
115
Ω
ns
pC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73249
S09-0223-Rev. D, 09-Feb-09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI7620DN-T1-GE3
MOSFET N-CH 150V 13A 1212-8
SI7625DN-T1-GE3
MOSFET P-CH D-S 30V 1212-8 PPAK
SI7629DN-T1-GE3
MOSFET P-CH 20V 1212-8 PPAK
SI7634BDP-T1-E3
MOSFET N-CH D-S 30V PPAK 8SOIC
SI7636DP-T1-GE3
MOSFET N-CH D-S 30V PPAK 8SOIC
SI7655DN-T1-GE3
MOSFET P-CH 20V D-S PPAK 1212
SI7658ADP-T1-GE3
MOSFET N-CH 30V 60A PPAK 8SOIC
SI7682DP-T1-GE3
MOSFET N-CH D-S 30V PPAK 8SOIC
相关代理商/技术参数
SI7540DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 12-V (D-S) MOSFET
SI7540DP_09
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 12-V (D-S) MOSFET
SI7540DP-T1
功能描述:MOSFET 12V 11.8/8.9A 1.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7540DP-T1-E3
功能描述:MOSFET N-and P-CHANNEL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7540DP-T1-E3
制造商:Vishay Siliconix 功能描述:MOSFET
SI7540DP-T1-GE3
功能描述:MOSFET N/P-Ch MOSFET 12V 17/32mohomS@4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI-7600
制造商:SANKEN 制造商全称:Sanken electric 功能描述:3-Phase Stepper Motor Driver ICs
SI-7600D
制造商:SANKEN 制造商全称:Sanken electric 功能描述:3-Phase Stepper Motor Driver ICs